FIELD: semiconductors.
SUBSTANCE: method includes prior heating of material by high-frequency electromagnetic field in two stages: at first stage material is heated up to 100-400°C with minimally set voltage and current of electromagnetic field, at second stage heating to 400-600°C is performed with maximally set voltage and minimally set current of electromagnetic field, and then material heating is continued up to given temperature by high-frequency electromagnetic field with maximally set voltage and current of said field.
EFFECT: higher effectiveness.
1 dwg
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