FIELD: jewelry industry.
SUBSTANCE: method involves forming micro marking on basic face of diamond by subjecting holder or grip with diamond to centrifuging; applying photoresist onto side face and subjecting it to thermal processing by heating grip base; moving grip onto table of apparatus for exposing to light using exposure radiation with pattern which is diminished image of template, said exposure radiation passing through objective; projecting exposure radiation by means of radiation source, wherein wavelength may constitute from 350 to 450 nm. In order to provide locating, orienting and focusing of image, radiation source is adjusted so as to project radiation within wavelength range of from 500 to 550 nm, said radiation having no action upon resist. Method further involves forming adjustment pattern on side face, said pattern being observed in observation plane by means of objective and beam splitter; after exposure, developing resist and subjecting exposed zone of basic face to etching with the use of plasma.
EFFECT: simplified and intensified process for applying various markings onto precious stones, and reduced marking applying process costs.
37 cl, 3 dwg
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Authors
Dates
2006-10-20—Published
2002-02-18—Filed