DIAMOND MARKING METHOD Russian patent published in 2003 - IPC

Abstract RU 2198099 C2

FIELD: applying of marking on diamonds. SUBSTANCE: method involves applying resist layer onto diamond surface; performing ablation of selected zone of resist layer for forming mask on diamond surface; providing masked etching of diamond surface for marking diamond surface. Prior to ablation of selected zone of resist, current conductive layer is applied to said zone and electrical connection with current conductive layer is provided during etching procedure for preventing charge accumulation during etching process. Method allows marking invisible with the naked eye to be produced on diamond surface. EFFECT: simplified method and increased resolution of marking. 16 cl, 1 ex

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RU 2 198 099 C2

Authors

Smit Dzhejms Gordon Charters

Gaj Kejt Barri

Pauehll Grehkhem Ral'F

Gokrodzher Majkl Piter

Dates

2003-02-10Published

1998-05-22Filed