REPROGRAMMABLE PERMANENT MEMORY DEVICE Russian patent published in 2008 - IPC G11C16/00 

Abstract RU 2315372 C1

FIELD: impulse engineering.

SUBSTANCE: reprogrammable permanent memory device contains information input (1) and information output (2), communication block (3), microprocessor management block (4), reset signal generation block (5), memory selection block (6), reprogrammable memory block (7) and block (8) for generating programming voltage. Programming input of reprogrammable memory block (7) is connected to output of reset signal generation block (8), first input of which is input (9) for connection to programming voltage source which is not shown. First output of reset signal generation block (5) is connected to third input of programming voltage generation block (8), second output is connected to first input of microprocessor management block (4), second input and first output of which are connected, respectively, to first output and input of communication block (3), second input and output of which are information output (2) and information input (1) of device, respectively. First group of microprocessor management block (4) is connected to first group of reprogrammable memory block (7), group of inputs-outputs of which is connected to group of inputs-outputs of microprocessor management block (4), second group of outputs of which is connected to group of inputs of memory selection block (6), group of outputs of which is connected to second group of inputs of reprogrammable memory block (7), output of which is connected to second input of programming voltage generation block (8).

EFFECT: low time of information erasure, possible sanctioning of access to information reading and simplified management.

7 dwg

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RU 2 315 372 C1

Authors

Vovk Nikolaj Nikolaevich

Gavrilin Aleksandr Nikolaevich

Efremov Roman Valer'Evich

Kolyvanov Aleksandr Nikolaevich

Fomchenko Viktor Nikolaevich

Jarulin Ralif Raufovich

Dates

2008-01-20Published

2006-06-13Filed