FIELD: impulse engineering.
SUBSTANCE: reprogrammable permanent memory device contains information input (1) and information output (2), communication block (3), microprocessor management block (4), reset signal generation block (5), memory selection block (6), reprogrammable memory block (7) and block (8) for generating programming voltage. Programming input of reprogrammable memory block (7) is connected to output of reset signal generation block (8), first input of which is input (9) for connection to programming voltage source which is not shown. First output of reset signal generation block (5) is connected to third input of programming voltage generation block (8), second output is connected to first input of microprocessor management block (4), second input and first output of which are connected, respectively, to first output and input of communication block (3), second input and output of which are information output (2) and information input (1) of device, respectively. First group of microprocessor management block (4) is connected to first group of reprogrammable memory block (7), group of inputs-outputs of which is connected to group of inputs-outputs of microprocessor management block (4), second group of outputs of which is connected to group of inputs of memory selection block (6), group of outputs of which is connected to second group of inputs of reprogrammable memory block (7), output of which is connected to second input of programming voltage generation block (8).
EFFECT: low time of information erasure, possible sanctioning of access to information reading and simplified management.
7 dwg
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Authors
Dates
2008-01-20—Published
2006-06-13—Filed