FIELD: recording radiation in wide range of spectrum, including ultraviolet one.
SUBSTANCE: proposed avalanche photodetector has semiconductor p-n layer and incident-radiation spectral compound converter in the form of fluorescent layer. Optically transparent layer of high refractive index is provided between incident-radiation spectral compound converter and semiconductor layer.
EFFECT: enhanced effectiveness of incident-radiation spectral compound conversion without heavy loss in photodetector sensitivity due to reduced loss brought in by fluorescent layer structure.
3 cl, 4 dwg
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