AVALANCHE PHOTODETECTOR (VERSIONS) Russian patent published in 2002 - IPC

FIELD: microelectronics; recording rays of various spectrum ranges and charged particles. SUBSTANCE: avalanche photodetector of alternative 1 has semiconductor substrate, region of polarity of conductivity other than that of substrate, local regions of same polarity of conductivity, highly doped regions of polarity of conductivity other than that of substrate which are disposed in-between, as well as buffer layer and metal electrode arranged above each of local regions. Highly doped regions are unidirectionally disposed between local regions along photodetector surface. Avalanche photodetector of alternative 2 has insulating substrate and thin semiconductor layer formed on the latter and provided with local regions of polarity of conductivity other than that of semiconductor layer, highly doped regions of same polarity of conductivity as semiconductor layer disposed in-between, as well as buffer layer and field-effect electrode arranged above each local region. Highly doped regions are unidirectionally disposed between local layers along photodetector surface. EFFECT: enhanced sensitivity of photodetector due to reduced dark currents. 16 cl, 4 dwg