FIELD: physics.
SUBSTANCE: light-emitting device has a semiconductor structure having a light-emitting layer lying between an n-type region and a p-type region and a photonic crystal formed inside or on the surface of the semiconductor structure, a ceramic layer lying on the path of light emitted by the light emitting layer. The ceramic layer consists of a wavelength converting material such as a phosphor or includes said material, wherein the ceramic layer is a self-supporting layer.
EFFECT: high efficiency of conversion.
14 cl, 15 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| LIGHT-EMITTING DEVICE CONTAINING LUMINESCENT CERAMIC AND LIGHT-DIFFUSING MATERIAL (VERSIONS) | 2007 |
|
RU2457582C2 |
| LIGHT SOURCE HAVING REFLECTING, WAVELENGTH-CONVERTING LAYER | 2008 |
|
RU2481671C2 |
| SEMICONDUCTOR LED WITH WAVELENGTH CONVERSION | 2010 |
|
RU2550753C2 |
| LIGHT-EMITTING DEVICE HAVING FILTER (VERSIONS) | 2007 |
|
RU2457580C2 |
| SEMICONDUCTOR LIGHT-EMITTING DEVICES GROWN ON COMPOSITE WAFERS | 2009 |
|
RU2515205C2 |
| LIGHT-EMITTING DEVICE WITH CONVERTED WAVELENGTH | 2011 |
|
RU2596179C2 |
| LIGHT-EMITTING DIODE | 2017 |
|
RU2666578C1 |
| III-NITRIDE LIGHT-EMITTING DEVICE HAVING LIGHT-EMITTING AREA WITH DOUBLE HETEROSTRUCTURE | 2006 |
|
RU2412505C2 |
| LIGHT-EMITTING DEVICE BASED ON NITRIDE OF GROUP III ELEMENT WITH LIGHT-EMITTING LAYER WITH REDUCED VOLTAGES | 2012 |
|
RU2591246C2 |
| LIGHT-EMITTING DEVICE BASED ON NITRIDE OF GROUP III ELEMENT, HAVING LOW-STRESS LIGHT-EMITTING LAYER (VERSIONS) | 2007 |
|
RU2457581C2 |
