METHOD FOR CONTROLLING A GATE-CONTROLLED THYRISTOR Russian patent published in 2008 - IPC H02M1/16 H02H7/122 

FIELD: electric engineering, possible use in power supplies based on current inverters for inductive heating plants and for plasma-chemical synthesis of ozone.

SUBSTANCE: method for controlling a gate-controlled thyristor includes alternating injection of opening and closing control current impulses to controlling electrode of gate-controlled thyristor. Anode current of gate-controlled thyristor is measured, current level is set, measured anode current is compared to set current level. Before injecting the closing control impulse into control electrode of gate-controlled thyristor, anode current is reduced to given level of current at given speed by means of opposite discharge of capacitor charged in advance onto gate-controlled thyristor through a throttle. Closing impulses of control current is injected into control electrode of gate-controlled thyristor at the moment when measured anode current is equal to given current level.

EFFECT: increased reliability of operation of gate-controlled thyristor in current inverters.

2 dwg