THERMOELECTRIC SEMICONDUCTING MATERIAL, THERMOELECTRIC SEMICONDUCTING ELEMENT WITH APPLICATION OF THERMOELECTRIC SEMICONDUCTING MATERIAL, THERMOELECTRIC MODULE WITH APPLICATION OF THERMOELECTRIC SEMICONDUCTING ELEMENT AND METHOD OF THEIR MANUFACTURING Russian patent published in 2008 - IPC H01L35/16 H01L35/34 

FIELD: electricity.

SUBSTANCE: thermoelectric semiconducting material has rich Te phases, finely dispersed in phase of complex semiconducting connection. Directions of facet C span of most crystal grains are oriented in similar manner. Method of manufacturing includes preparation of mixture, which consists of composition (Bi-Sb₂)Te₃ with added surplus of Te, mixture melting and melt crystallization on the surface of cooling roller with circular rotation speed of 5 m/sec or less. The sheet-like material is produced with the thickness of 30 mcm or more. Sheet-line thermoelectric semiconducting materials are layered in direction of thickness, then their molding is done with pressing in mold. The molded item is received, and its plastic deformation is performed in such a way so that the shift force is applied in single-axis direction, approximately parallel to direction of layering thermoelectric semiconducting materials. The thermoelectric semiconducting material is produced with such characteristics of crystals orientation that not only the directions of C facet span of hexagonal structure of crystal grains, but also directions of their c-axis are oriented in almost similar manner.

EFFECT: improvement of thermoelectric efficiency factor at the account of crystals orientation properties improvement.

35 cl, 27 dwg