METHOD OF OBTAINING THERMOELECTRIC SEMICONDUCTOR ALLOY, MODULE OF THERMOELECTRIC TREANSFORMATION AND THERMOELECTRIC DEVICE FOR ELECTRIC ENERGY GENERATION Russian patent published in 2009 - IPC C22C1/04 C22C30/00 H01L35/20 

FIELD: chemistry.

SUBSTANCE: invention relates to obtaining thermoelectric semiconductor alloys and can be used in elements, modules and devices for thermoelectric transformation, as well as in systems of discharged heat recuperation and solar heat utilisation. Geisler alloy is represented by formula Fe₂V_1-xA_xA_1-yB_y, semi-geisler alloy - Ti_1-xA_xNi_1-yB_ySn_1-zC_z, where A is at least one element selected from transitive metals, such as Co, Ni, Ti, V, Cr, Zr, Hf, Nb, Mo, Ta and W, B is at least one element selected from group consisting of Al, Ga, In, Si, Ge and Sn. Ratio of the strongest peak of Geisler or semi-geisler phases, measured at Roentgen diffraction on powders, constitutes 85% or more and is determined as IHS/(IHS+IA+IB)×100%, where intensity of the strongest peak of Geisler or semi-geisler phases is designated as HIS, intensity of the strongest peak of additive phase A is designated as IA, and intensity of the strongest peak of phase B is designated as IB. Alloys are obtained by hardening with melt tempering at cooling rate from 1×10² to 1×10³°C/sec and grinding of obtained alloy using jet mill into powder which has average particle diametre from 1 to 100 mcm.

EFFECT: alloys are characterised by having almost single phase, which allows using them for obtaining devices possessing high operating characteristics in wide temperature range.

10 cl, 7 dwg, 3 tbl, 2 ex