FIELD: provision of materials applicable as ferromagnetic semiconductors in devising of memory elements and also multifunctional devices and integrated circuits. SUBSTANCE: offered ferromagnetic semiconducting material presents solid solution of iron ditelluride in trichromium tetratelluride with the following amounts of components, mol.%: iron ditelluride 3-12; trichromium tetratelluride 88-97. Offered solid solutions posses magnetic properties at room temperature (300 K) that allows its use in devices not needing special cooling. Magnetization value is 90-100 conventional units. By its specific resistance at various temperatures, the offered material may be attributed to semiconductors. Unique combination of semiconducting and magnetic properties of solid solution make them promising for wide practical application. EFFECT: provided material possessing simultaneously ferromagnetic and semiconducting properties. 1 cl, 1 tbl, 1 ex
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Authors
Dates
1999-12-10—Published
1997-05-26—Filed