FIELD: technological process.
SUBSTANCE: invention is related to the field of crystals growing and may be used in electronic, chemical industries, in jewelry-making. Method consists in melting of primary stock, seeding onto rotating primer, growing of crystal conical part and crystal pulling. As primary stock mixture of terbium and gallium oxides mixture, after conical part growing has been commenced, the speed of single crystal pulling from melt is reduced according to the following dependence vL=v0-kL, where vL - speed of pulling at crystal length L, mm/hr, v0 - speed of pulling at the beginning of crystal conical part growing, which is equal to 2-7 mm/hr, L - current value of crystal length, mm, k - proportionality constant, which is equal to 0.1-0.2, at that angle of conical part growing is at least 140°.
EFFECT: allows to prepare homogeneous crystals with minimum concentration of defects and increased output of available cylindrical part.
1 ex
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Authors
Dates
2008-07-10—Published
2006-09-15—Filed