METHOD OF PRODUCING INDIUM PHOSPHIDE MONOCRYSTALS Russian patent published in 2012 - IPC C30B27/02 C30B29/40 C30B15/36 

Abstract RU 2462541 C2

FIELD: chemistry.

SUBSTANCE: method involves seeding, growing a monocrystal to given diameter while simultaneously stretching its conical part at a given rate and then growing the cylindrical part of the crystal. When growing the conical part of the monocrystal, the speed of rotation of the crucible and the rate of stretching the monocrystal are respectively increased from 0-2 rpm and 0-5 mm/h while seeding to 3-6 rpm and 15-30 mm/h upon achieving the given diameter, and after achieving the given diameter, the rate of stretching the conical part of the monocrystal is increased to 50-150 mm/min for 1.0-6.0 s, followed by continued growth of the cylindrical part of the monocrystal at a given rate. The seed crystal can have crystal-lattice orientation of the growing axis of <511>B.

EFFECT: reduced probability of twinning on the conical part of the monocrystal owing to high quality and higher output of suitable indium phosphide monocrystals.

2 cl, 1 tbl, 3 ex

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RU 2 462 541 C2

Authors

Babokin Jurij Luk'Janovich

Elsakov Valerij Gennad'Evich

Makalkin Vladimir Ivanovich

Mel'Nikov Jaroslav Sergeevich

Tsyplenkov Igor' Nikolaevich

Dates

2012-09-27Published

2010-04-20Filed