METHOD OF MONOCRYSTALS GROWING FROM A MELT Russian patent published in 2004 - IPC

FIELD: production of monocrystals. SUBSTANCE: the invention presents a method used for growing of monocrystals from the tough melts of refractory oxides by the Stepanov method. The method of growing monocrystals from melt for production of the bulky profiled volumetric calibrated monocrystals with high perfection of their structure. The method of growing of monocrystals using the seed crystals from the (tough) melts of refractory oxides from a king-pot with a die at creation of a circular form isotherm in the melt provides for the growing at the synchronous rotation in one side of the king-pot, the die and the seed crystal at correspondence of the crystallographic faces of the seed crystal to the form of the die. At that the circular form isotherm is made by the heater repeating the form of the king-pot installed in the heater assembled from the U-shaped lamels made of the rods of refractory metals and alloys and assembled (installed) either in a circle or in sections with total quantity of the lamels divisible by the number of faces of the growing monocrystals and divisible by 12. The seeding is carried out in the center of the die and the growth of a monocrystal is carried out from the center to the edge of the die having a high temperature. Technical result of the invention is alignment of the radial temperatures in the king-pot with a melt, in the die and in the growing monocrystal, an increase of output of a suitable piece at manufacturing of articles of the given profile. EFFECT: alignment of the radial temperatures in the king-pot, the die, in the growing monocrystal; increased output of suitable pieces at manufacturing of articles of the given profile. 2 cl, 2 dwg