METHOD OF DECONTAMINATION OF RADIATION-ALLOYED SILICON Russian patent published in 2008 - IPC G21F9/00 

FIELD: chemistry.

SUBSTANCE: in consecutive two-stage processing with alkaline oxidative solution, which contains sodium hydroxide, and with solution of oxalic acid, on both stages oxidative solutions based on hydrogen peroxide are used. The second stage is carried out not later than 5÷30 minutes after the end of the first stage. On the first stage it is preferable to use oxidative solution with the following composition: 10-50 g/l NaOH+20÷30 g/l H₂O₂, on the second stage - oxidative solution with composition: 20÷50 g/l H₂C₂O₄+20÷30 g/l H₂O₂.

EFFECT: possibility of silicon decontamination at room temperature and obtaining silicon suitable for use in any branch of industry.

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