SILICON DECONTAMINATION TECHNIQUE Russian patent published in 1998 - IPC

Abstract RU 2119688 C1

FIELD: nuclear engineering; decontamination and etching of single-crystalline nuclei-doped silicon. SUBSTANCE: silicon surface is treated with alkali solution of alkali metal persulfate. Proportion of components in decontaminating solution is as follows, g/l: XOH - 10-100; X2S2O8 - 0.5-5, where X is alkali metal. Proposed technique enables treatment of single-crystalline nuclei-doped silicon with decontamination factor up to 100 (residual contamination of surface lower than 0, 01 Kb/sq.cm). EFFECT: improved decontamination efficiency. 12 ex, 1 tbl

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RU 2 119 688 C1

Authors

Shevchenko V.G.

Karrask M.P.

Nesterenko A.P.

Mednikov A.K.

Mochenov M.I.

Chumachenko G.A.

Dates

1998-09-27Published

1997-03-04Filed