DEVICE FOR GROWING OF REFRACTORY SINGLE CRYSTAL Russian patent published in 2009 - IPC C30B17/00 C30B15/14 

FIELD: metallurgy.

SUBSTANCE: invention relates to the process of refractory single crystal growing, particularly, sapphire, ruby, from melt with usage of seed crystal. Device includes two-sectional chamber 1, in top section of which it is located mobile by vertical water-cooled guide bar 4 with seed-holder 5, and in bottom section it is installed crucible 2 on support. Furnace in the form of two-sectional heater is formed from U-shaped solder pads, collected and bended by shape of crucible, top ands of which are fixed in annular current leads 13, located co-axial relative to vertical axis of whole device. Sections of chamber 1 are divided by set of attachable shields 9 with central hole for pass of water-cooled guide bar 4 with seed-holder 5, installed on top edges of crucible 2, and heater is implemented from tungsten rods, allowing different thickness in top 11 and bottom 12 sections so that cross-section area of tungsten rods of top sections 11 of heater, located higher the crucible level 2, exceed not less than two times cross-section area of tungsten rods of bottom section 12 of heater, enveloping outside crucible surface 2, herewith elements of top and bottom sections of heater forms united U-shaped solder pads. On current leads 13, installed on the top of two-sectional chamber, there are fixed from above through the electrical insulating insertion pieces 14 holders 15 of hanging shields 16, implemented in the form of set of horizontal molybdenum plates of annular strap and located in top section of growth station between water-cooled guide bar 4 and top section 11 of heater.

EFFECT: device design simplification, provides ability of creation of convex crystallisation front, creates conditions of reduction amount of boils in crystal that in the long run, provides receiving of large crystals of high optical quality with homogeneous structure at saving of electricity consumption during the growing process.

2 cl, 1 dwg