DEVICE FOR MONOCRYSTALS GROWING FROM MELT Russian patent published in 2004 - IPC

FIELD: production of monocrystals. SUBSTANCE: the invention presents a device used for the profiled monocrystals growing from a melts with a seed crystal, for example, sapphire by the Chokhralsky and Kiropulos methods. The device includes a cylindrical chamber with a cover, a king-pot for a melt, a seed-holder mounted on a rod with a capability of motion. The chamber is made two-sectional and with the mechanism of a vertical motion of the sections. The thermal assembly, mounted between the upper and lower sections of the chamber, is made in the form of a hollow water-cooled cylinder, with located inside it a heater assembled out of the U-shaped lamels, bent following the form of the king-pot, and closed-circuit ring-type water-cooled current conductors. The cylinder surface is fixed to an additional rod, which is supplied with the mechanism to relocate the cylinder in vertical direction and around the rod. The inner side of the cylinder in its lower part has ledges, on which insulators are placed. The current conductors have pinholes, in which the free ends of lamels are fixed, and the bent U-shaped ends of the lamels are fixed on the ring centering them; current conductors are installed on the insulators centering the heater, and their leads are located on the side surface of the cylinder in different horizontal planes. The invention ensures creation and maintenance of the constant forms of the radial isotherms with different geometry along the full length of a being grown monocrystal, decrease of structural defects in the crystal due to carrying out the process of growing at minimum temperature gradients, ease of operation and ergonomics. EFFECT: decrease of structural defects in the crystals, ease of operation and ergonomics. 6 cl, 3 dwg