DEVICE FOR GROWING OF VOLUMETRIC RECTANGULAR MONOCRYSTALS OF SAPPHIRE Russian patent published in 2009 - IPC C30B15/34 C30B29/20 C30B15/14 

FIELD: mining.

SUBSTANCE: device contains vacuum chamber 1 with installed in it melting pot 2 with rectangular form-builder 3, located: in inner space of heater 4, collected from lamella, located by generatrix of heater 4, replicating shape of melting pot 2. Free ends of lamella are fixed on current leads 5. Melting pot 2 and generatrix of heater 4, by which there are located lamellas, allows squared shape, height of lamella exceeds height of melting pot for 20-25%, number of lamellas, located in middle part of each side of generatrix and compounding 1/3 of its width, 2-2.2 times less than number of lamella, located by edges of side, and cross-section area of form-builder for 35-45% less, than cross-section area of melting pot. Lamella can be implemented as solid or compound, consisting of two identical sections, located on over other. Squared shape of melting pot and generatrix of heater, by which there are located lamellas, it is implemented with fillet.

EFFECT: reduction of process duration and losses of initial raw material at growing of high-grade oversize crystals.

3 cl, 2 dwg