TRANSISTOR HIGH-FREQUENCY AMPLIFIER ON COMMON-BASE CIRCUIT Russian patent published in 2009 - IPC H03F3/189 

FIELD: physics; radio.

SUBSTANCE: invention concerns radio engineering and communication area and can be used as entrance and intermediate analogue microcircuits cascades of various functional purposes (high-frequency and superhigh-frequency amplifiers, filters etc.). The high-frequency transistor amplifier on the common-base circuit contains an access transistor (1) with the emitter acting as a low-resistance amplifier input (2) connected with a source of signal (3), the collector is connected to an amplifier output (4) and a load circuit (5), and the base is connected with a high-frequency compensation circuit (6). The first (7) additional transistor, the auxiliary current amplifier (8)and the current-stabilizing two-terminal element (9) are included into the scheme; the emitter of the first additional transistor (7) is connected to the access transistor emitter (1), bases of the first (7) additional transistor and the first (1) access transistor are coupled and connected to an output of the auxiliary current amplifier (8), the collector of the first additional transistor (7) is jointed to an input of the auxiliary current amplifier (8) and the current-stabilizing two-terminal element (9).

EFFECT: increase of steady-state behaviour stability.

6 cl, 9 dwg