LIGHT-EMITTING DIODE MATRIX Russian patent published in 2009 - IPC H01L33/00 

FIELD: electric engineering.

SUBSTANCE: invention is related to electronic engineering and may be used in production of lighting and signalling devices. Light-emitting diode matrix (LM) comprises semiconductor light-emitting diodes 1 with electric contacts 2, fixed on base 3, arranged with through locating holes 4. LM comprises cover 6 made of transparent material, fixed on base, which is arranged with at least two fixing pins 7 on side inverted to base, matching locating holes 4 in base 3. LM is arranged with protruding lenses 8 on surface of cover 6, opposite to surface joined with base 3, which are formed with cavities 9 on surface joined with base 3, and pins 7, matching through locating holes 4 in base 3. Each cavity 9 covers one or several light-emitting diodes 1 with their electric contacts 2 and comprises light-conducting medium 10, which contains particles of light-scattering substance and particles of phosphor. Each cavity 9 communicates with environment via one or several additional through holes 11 in base 3 for filling of cavities with light-conducting medium 10. Minimum distances from each point of surface of each cavity to surface of semiconductor light diode closest to this point are equal to each other.

EFFECT: invention provides for even distribution of radiation in specified range of waves at the outlet from device.

2 dwg