TRANSISTOR KEY WITH PROTECTION AGAINST SHORT-CIRCUITING Russian patent published in 2009 - IPC H03K17/08 

FIELD: radio engineering.

SUBSTANCE: invention relates to pulsed hardware. Transistor key comprises semiconductor key with its first output connected to supply bus and its second output connected to common bus. First transistor collector is connected to semiconductor key input. First transistor base is connected, via fist resistor, to the output of first logical element OR-NO, while, via second resistor, it is connected to first transistor emitter and common bus. Second input of first logical element OR-NO is connected to the output of second logical element OR-NO, while, via fourth resistor, it is connected to second transistor base and third resistor first output. Third resistor second output is connected to second transistor emitter and second supply bus whereto first output of the relay element operation threshold setter is connected. Second transistor collector is connected, via fifth resistor, to inverting input of relay element and diode anode. Diode cathode is connected to semiconductor key second output. Second output of the relay element operation threshold setter is connected to common bus and output is connected to non-inverting input of relay element. Relay element output is connected to first input of first logical element OR-NO. First and second inputs of the second element OR-NO are integrated and represent the input of transistor key with protection against short-circuiting.

EFFECT: perfected circuitry.

1 dwg