CONTENT-ADDRESSABLE MEMORY CELL Russian patent published in 2010 - IPC G11C15/00 

FIELD: information technology.

SUBSTANCE: content-addressable memory cell has two CMDS inverters, two address transistors, four recording transistors, two output transistors, a reading transistor and a request transistor. The CMDS inverters are connected between the power bus and the earth bus. The output of the first CMDS inverter is connected to the input of the second inverter, to the gate of the second output transistor and through the first address transistor to the first recording unit. The output of the second CMDS inverter is connected to the input of the first inverter, to the gate of the first output transistor and through the second address transistor to the second recording unit. The first and third recording transistors are connected between the first recording unit and the power bus and the earth bus respectively. The second and fourth recording transistors are connected between the second recording unit and the power bus and the earth bus respectively. Gates of the first and fourth recording transistors are connected to the direct data bus, and gates of the second and third recording transistors are connected to a complementary data bus. Gates of address transistors are connected to the address bus.

EFFECT: reduced power consumption.

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