METHOD OF PRODUCING HIGHLY PURE ARSENIC Russian patent published in 2010 - IPC C01G28/00 

FIELD: chemistry.

SUBSTANCE: invention can be used in electronic industry, in optical and semiconductor engineering, glass manufacturing and in chemical industry as a catalyst additive. Trialkylarsenites of general formula (RO)₃As, where R = CH₃, C₂H₅, are reduced using hydrazine from the "pure" or "highly pure" category with molar ratio of esters to hydrazine equal to 1:3-1:3.2 and temperature (70-100)°C or hydrazine hydrate from the "pure" or "highly pure" category with molar ratio of esters to hydrazine hydrate equal to 1:3-1:6 and temperature (130-150)°C. Precipitate of amorphous arsenic is filtered off, washed and dried.

EFFECT: invention enables to obtain arsenic with purity of up to 99,99 wt %, with output of up to 97% of the theoretical value, simplifies the technology and widens the raw material base for producing pure arsenic.

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