METHOD OF PRODUCING GRANULAR POLYCRYSTALLINE SILICON IN FLUIDISED BED REACTOR Russian patent published in 2010 - IPC C01B33/27 C30B29/06 C30B28/14 

FIELD: chemistry.

SUBSTANCE: invention can be used in making semiconductor devices and solar cells. A reaction pipe lies inside the reactor housing such that the inside of the reactor housing is divided into an inner zone formed inside the reaction pipe and an outer zone formed between the reactor housing and the reaction pipe. A layer of silicon particles forms in the inner zone. A fluidised bed is formed in the reactor by feeding fluidising gas into the layer of silicon particles. The layer of silicon particles is heated and a reaction gas containing silicon atoms is fed the fluidised layer of silicon particles such that silicon is deposited in the inner zone. The reaction gas which contains silicon atoms is selected from a group consisting of monosilane, dichlorosilane, trichlorosilane, silicon tetrachloride or their mixture. Particles of polycrystalline silicon and waste gas are removed from the reactor and pressure difference of about 1 bar is maintained between the inner and outer zones.

EFFECT: invention enables production of highly pure polycrystalline silicon in a fluidised bed reactor made from material which is suitable for operation at atmospheric pressure without limitation in increasing reaction pressure.

14 cl, 10 ex