FIELD: electricity.
SUBSTANCE: high-voltage semiconducting switching device consists of selected by leakage current series connected unpackaged semiconducting elements that are centred and isolated by side surface with the help of fluoroplastic rings, housing, clamping system and current-carrying electrodes. The housing is made of isolating material with high mechanical and electrical strength. At both housing ends there are rigidly fixed metal flanges that are included in clamping system with threaded holes. At bolting of switching device cover to housing flanges with the help of clamping system elements located inside the cover there created is necessary compressive force of semiconducting devices and its transmission through the housing to semiconducting devices. Note that at the same time there performed is pressurisation of inner volume of switching unit housing by O-rings located between flanges and current-carrying electrodes.
EFFECT: increase of specific switching power of high-voltage semiconducting switching device current at simultaneous improvement of its switching characteristics.
5 cl, 1 dwg
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