REVERSIBLE-CONNECTED DYNISTOR WITH INTEGRATED CONTROL Russian patent published in 2019 - IPC H01L29/74 

FIELD: electrical engineering.

SUBSTANCE: invention relates to powerful pulsed semiconductor devices intended for high-voltage solid-state switches used in accelerating and laser equipment, radar, electrical equipment for controlled thermonuclear synthesis, electric discharge, electromagnetic and beam technologies. Technical result is achieved by design of reversibly-connected dynistor with integrated control (RCDC), which is a four-layer p⁺-n-p-n⁺-structure with anode p⁺- and cathode n⁺-emitters, short-circuited shunts, with built-in reverse diodes, wherein in the central region of the diode-thyristor there is an asymmetric thyristor with a regenerative control electrode and an active region in form of p⁺-n-p-n⁺ structure located around the regenerative control electrode and repeating its shape having n- and p-bases common to the reverse-connected dynistor, high-voltage commutator junction, cathode and anode metal coatings, as a result of which the RCDC is actuated by a low-power control pulse, similar to a thyristor, by switching the first powerful forward current pulse, and then the device is switched on by the reverse-injection control mechanism, thus ensuring efficient operation of the high-speed RCDC in switching modes of powerful weakly-damped bipolar current pulses.

EFFECT: creation of a power semiconductor device connected by a low-power current pulse similar to a conventional thyristor control pulse, for use in circuits of powerful switches based on in-series connected devices, intended for operation in switching modes of alternating-sign damped current pulses.

4 cl, 1 dwg