CASCODE DIFFERENTIAL AMPLIFIER Russian patent published in 2011 - IPC H03F3/45 

Abstract RU 2421893 C1

FIELD: electricity.

SUBSTANCE: cascode differential amplifier includes input differential cascade (1) with the first (2) and the second (3) current outputs, the first (4) and the second (5) output transistors the bases of which are connected to offset voltage source (6); emitter of the first (4) output transistor is connected to the first (2) current output of input differential cascade (1); emitter of the second (5) output transistor is connected to the second (3) current output of input differential cascade (1); the first (7) resistor of collector load, which is connected through the first output to the first (8) output of device and collector of the first (4) output transistor; the second (9) resistor of collector load, which is connected through the first output to the second (10) output of device and collector of the second (5) output transistor; the first (11) and the second (12) power sources; at that, the first (11) power source is connected to emitter power supply circuit of input differential cascade (1). To the diagram there introduced is the first (13) and the second (14) non-inverting current repeaters; output of the first (13) non-inverting current repeater is connected to the first (2) current output of input differential cascade (1); output of the second (14) non-inverting current repeater is connected to the second (3) current output of input differential cascade (1); input of the first (13) non-inverting current repeater is connected to the second output of the first (7) collector load resistor and through the first (15) additional bipole to the second (12) power source; input of the second (14) non-inverting current repeater is connected to the second output of the second (9) collector load resistor and through the second (16) additional resistor to the second (12) power source.

EFFECT: increasing amplification coefficient as to voltage when using relatively low-ohmic resistors of collector load in conditions of SiGe-technology limits for power supply voltages.

3 cl, 6 dwg

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RU 2 421 893 C1

Authors

Prokopenko Nikolaj Nikolaevich

Budjakov Petr Sergeevich

Serebrjakov Aleksandr Igorevich

Dates

2011-06-20Published

2010-05-14Filed