MICROSTRIP p-i-n-DIODE MICROWAVE SWITCH Russian patent published in 2011 - IPC H01P1/00 

FIELD: electricity.

SUBSTANCE: invention is intended to be used in telecommunications systems, electrically controlled microwave devices such as strip or selective filters, antennae, tunable oscillators. The task of this proposal is to implement the possibility of creating microstrip narrowband electrically controlled microwave switches and switches with increased variation range of power of the passed microwave signals from open to closed state. In the design p-i-n-diode is not connected directly to a piece of microstrip transmission line (MTL), which allows using the device at higher frequencies and does not create the factor restricting maximum switching power. According to the decision, microstrip p-i-n-diode microwave switch includes a piece of microstrip transmission line of electromagnetic waves, which includes dielectric plate coated with metal on one side, and strip conductor on the other side of plate, short-circuiter connecting the strip conductor to metal-coated side of dielectric plate; in-series circuit consisting of capacitive and inductive elements, which is connected between strip conductor and metal-coated side of the plate; at that, inductive element is made in the form of loop element, one or more turns of which envelopes p-i-n-diode; at that, p-i-n-diode has the possibility of being connected to control voltage source and is galvanically insulated from in-series circuit. Piece of microstrip transmission line is located on metal base protruding beyond its limits, and p-i-n-diode is located on the protruding part of the base on the side of short-circuiter; at that, distance between short-circuiter and p-i-n-diode does not exceed one fourth of length of electromagnetic wave.

EFFECT: increasing the damping level in closed state when providing high frequency selectivity; reducing the influence of parasitic active and reactive components of diode.

2 cl, 4 dwg