FIELD: radio engineering.
SUBSTANCE: invention relates to radio engineering and, in particular, to microstrip transmission lines. Device comprises a commutated section of the microstrip transmission line, which is connected to semiconductor diodes connected with a radiator located on a grounded plate and decoupling circuits by DC located near the input and the output sections of the microstrip transmission line, herewith every circuit of direct current decoupling is made in the form of a half-wave section of the slotted line cut in the grounded plate perpendicular to the commutated section of the microstrip transmission line, and ends of the input, the output and the commutated sections of the transmission line are connected to quarter-wave stubs located each relative to corresponding sections of the strip transmission line at an angle less than 45°.
EFFECT: technical result is the increase of commutated power level.
1 cl, 1 dwg
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