NANODEVICE AND METHOD Russian patent published in 2012 - IPC B81B1/00 B81B3/00 

FIELD: devices based on nanotechnology.

SUBSTANCE: invention refers to devices that are based on nanotechnology such as nanodiodes and nanoswitches. The essence of the invention: a switching device with the nanocathode contains the support structure that serves as a supporting surface, the first electrically conductive structure that serves as the second surface and is located at some angle in relation to the supporting surface, at least one nanocathode of electrons that is formed on the second surface, the second electrically conductive structure, a non-conductor located between the first and the second electrically conductive structures. The first electrically conductive structure, the non-conductor and the second electrically conductive structure form a nanoswitch that in the activated mode causes breakage of the non-conductor so that the route of current electricity goes through the non-conductive material and between the first and the second electrically conductive structures.

EFFECT: production of efficient and effective switching devices with nanocathodes.

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