FIELD: optical amplifiers. SUBSTANCE: surface-type optical amplifier has active layer 13 of light-gain section 11 disposed between n semiconductor clad layer 12 that functions as n semiconductor layer and multilayer reflecting mirror 14 of p semiconductor. Light-gain section is fastened to semitransparent substrate 21 on n semiconductor clad layer side. Plurality of separated electrodes 16 ensures continuous power conduction relative to multilayer reflecting mirror in the form of p semiconductor through p-type shielding coating formed on reflecting mirror. Electrode 18 that provides continuous power conduction relative to n semiconductor clad layer is connected to magnet wire 20 disposed on transparent substrate surface. EFFECT: provision for amplifying single large-diameter uniform light beam and laser vibration. 5 cl, 3 dwg
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