FIELD: electricity.
SUBSTANCE: device comprises a crucible with a melt, a shaper 1 fixed in a location slot of a crucible cover and introduced into a crucible melt, a seed holder installed as capable of rotation, vertical and horizontal displacement, at the same time the working surface of the shaper is made in the form of edges 3 of circumference arcs with an inclination towards of the seed holder. Edges of the working surface of the seed holder may be arranged as curvilinear, for instance, in the form of an arc of a circumference, a parabola, a hyperbola, or as rectilinear. The device may apply several separate shapers that shape several convexo-concave lenses of the melt.
EFFECT: invention makes it possible to grow large-size crystalline hollow items with high structural perfection in the form of rotary bodies with the specified shape of the side surface.
3 cl, 8 dwg
Title | Year | Author | Number |
---|---|---|---|
METHOD OF GROWING PROFILED CRYSTALS FROM MELT | 2004 |
|
RU2265088C1 |
DEVICE FOR GROWING CRYSTALS IN FORM OF RODS AND TUBES FROM MELT | 2000 |
|
RU2178469C2 |
METHOD OF MANUFACTURE OF CRYSTALLINE ARTICLES FROM MELT | 1997 |
|
RU2160330C2 |
APPARATUS FOR PRODUCING TUBULAR CRYSTALS | 0 |
|
SU1712473A1 |
METHOD OF GROWING MONOCRYSTALLINE SAPPHIRE HEMISPHERICAL BLANKS | 1994 |
|
RU2078154C1 |
METHOD AND APPARATUS FOR PRODUCING SINGLE-CRYSTAL TUBES | 0 |
|
SU1306173A1 |
METHOD OF GROWING SHAPED CRYSTALS | 1994 |
|
RU2077616C1 |
DEVICE FOR GROWING SHAPED SAPPHIRE MONOCRYSTAL | 2005 |
|
RU2316621C2 |
DEVICE FOR GROWING OF THE RECTANGULAR MONOCRYSTALS OF SAPPHIRE | 2005 |
|
RU2310020C2 |
METHOD OF GROWING PROFILED CRYSTALS OF COMPLEX OXIDES | 0 |
|
SU1691433A1 |
Authors
Dates
2012-05-20—Published
2010-06-09—Filed