FIELD: technology of growing of shaped crystals of refractory oxides for structural units and articles. SUBSTANCE: method includes crystal seeding, growing and stage pulling from melt through shaper in form of continuous sequence of crystalline members with different profile (shape) from system of movable and final shapers. Provided at stage of pulling of crystal member with microrelief on its side surface is condition n/V > 1/L, where n is crystal rotation speed; V is pulling rate; L is height of melt meniscus between working surface of shaper and crystallization front. Transition to member with microrelief on its side surface is effected with a=rm+0.5bm, or a= Rm-Rsh, where a is distance between axis of crystal rotation and shaper axis; rm is inner diameter of tubular member; bm is wall thickness of tubular member; Rm is radius of rod member; Rsh is radius of shaper. Transition to member of screw-relief is effected at a ≤ bm, or ≤ Rm. Transition to member of spiral shape is effected at a > rm+bm, or > Rm. EFFECT: extended assortment of articles and increased product yield due to higher quality. 4 cl, 10 dwg
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Authors
Dates
2000-12-10—Published
1997-04-28—Filed