METHOD OF GROWING SHAPED CRYSTALS Russian patent published in 1997 - IPC

FIELD: crystal growing. SUBSTANCE: invention relates to technique of growing crystals from melt with varied cross-section shape. Seeding is performed onto seeding plate all over the perimeter of tubular shaper with formation of empty closed space, and material is drawn from the melt column on shaper end immersed into crucible in growing chamber. Shaper is provided with releasing non-capillary opening which, in stage of bulk crystal growth, is disposed below the melt level. When passing to hollow pattern, tubular space of shaper is connected through mentioned opening with growing chamber because of descending melt level in crucible below release opening, and, when passing from hollow pattern to monolithic one, communication of shaper space with that of growing chamber is interrupted because of rise of melt level to complete immersing release opening into melt. EFFECT: improved procedure.