SELECTIVE AMPLIFIER Russian patent published in 2013 - IPC H03F3/45 

FIELD: radio engineering, communications.

SUBSTANCE: between a collector of the first (2) input transistor and an emitter of the second (6) input transistor there are the following serially connected components: the third (11) resistor and the second (13) correcting capacitor, between the collector of the second (2) input transistor and buses of the first (5) and second (9) sources of power supply there is the third (16) correcting capacitor connected by AC, the base of the output transistor (14) is connected to the collector of the second (6) input transistor, its collector is connected to the second (9) bus of the power supply source, and the emitter is connected with the output of the device (17) and via the third (18) current-stabilising dipole to the first (5) bus of the power supply source, besides, between the output of the device (17) and the input of the device (1) there is the fourth (12) resistor connected.

EFFECT: higher quality of amplifier amplitude-frequency characteristic and its amplification ratio by voltage at quasiresonance frequency f₀, possibility to reduce overall power consumption and to implement a high-quality selective microwave device.

2 cl, 5 dwg