FIELD: metallurgy.
SUBSTANCE: direct current is supplied to an alloy in the mode of crystallisation and cooling along with the application of modulated signal in the form of a pulse alternating current on the carrier of the DC. The direct current flows in the whole volume of the alloy and the alternating current - on the alloy surface. By means of modulating the signal of the alternating pulse current the alloy crystals abruptly change their internal polarity at each change of the pulse current polarity. At the initial crystallisation moment the above leads to the destruction of normal crystallisation mode. Multiple defects of crystal structure appear. The rate of the crystal growth is dramatically limited and new crystals with damaged structure are formed. The structure defects are the centres for hydrogen atom penetration at charging the hydrogen accumulators.
EFFECT: production of defect crystals with homogenous structure in whole alloy volume.
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