FIELD: nanotechnology.
SUBSTANCE: invention relates to nanotechnology and is designed to produce nitride structures of nano-thickness. According to the first embodiment, the nitride nanofilm or nanowire is obtained by depositing the silicon layer on a fluoroplastic fibre or a fluoroplastic film followed by exposure to the temperature of 800-1200°C in the atmosphere of nitrogen or ammonia. According to the second embodiment the nitride nanofilm or nanowire is obtained by exposure the corundum fibre or film to the temperature of 800-1200°C in the atmosphere of nitrogen or ammonia in the presence of a reducing agent. According to the third embodiment, the nitride nanofilm or nanowire is obtained by deposition of boron layer on corundum fibre or film followed by exposure to the temperature of 1360°C in the atmosphere of nitrogen or ammonia at a pressure of 60-70 t/cm2 to obtain borazon.
EFFECT: inventions enable to extend the range of means of obtaining nitride nanofilms or nanowires.
3 cl, 4 ex
