METHOD FOR PROFILE SELECTION OF HIGH-VOLTAGE CIRCULAR SHIELDS Russian patent published in 2015 - IPC H03K3/00 H01J29/06 

Abstract RU 2538917 C1

FIELD: electricity.

SUBSTANCE: profile of rotation body with a smooth generatrix is used, the generatrix profile is selected against the shape of one of equipotential line of the electric field generated by two auxiliary electrodes made as groups of cylindrical and conical elements; one electrode is grounded, the other one has potential of the high-voltage shield, at that for the purpose of the shield profile selection the equipotential line is used with potential difference of 0.3-0.7 U in regard to any electrode, where U is voltage between the auxiliary electrodes.

EFFECT: reducing intensity of the electric field at the shield surface.

3 dwg

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RU 2 538 917 C1

Authors

Jur'Ev Andrej Leonidovich

Jur'Ev Il'Ja Andreevich

Nikolaev Dmitrij Pavlovich

Dates

2015-01-10Published

2013-10-07Filed