FIELD: process engineering.
SUBSTANCE: invention relates to production of nanocomposite and can be used instrument making and in other fields for production of materials built around semiconductors, dielectrics or metals. Proposed process comprises vacuum spraying on substrate of single-crystal silicon with section orientation (111) or (001) of the films of transition metals Co, Fe or Cr in depth multiple of one fourth or wavelength of their valence electrons with formation in at least one boundary ply between films and substrate, within the depth of plies equal to three monolayers of sub elements of inhomogeneous structure which, in one direction, feature sizes multiples of the lattice period and/or one fourth of wavelength of substrate or layer material valence electrons.
EFFECT: better properties on nanocomposite owing to formation of inhomogeneous nanostructure state in nanocomposite.
20 dwg
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Authors
Dates
2015-02-27—Published
2013-01-14—Filed