PRECISION OPERATIONAL AMPLIFIER FOR RADIATION-PROOF BIPOLAR-FIELD TECHNOLOGICAL PROCESS Russian patent published in 2015 - IPC H03F3/45 

FIELD: radio engineering, communication.

SUBSTANCE: precision operational amplifier for a radiation-proof bipolar-field technological process has the following features: the circuit includes first and second additional field-effect transistors, the combined sources of which are connected to a first power supply bus through an additional current-stabilising two-terminal element and are connected to the combined bases of first and second output transistors; the gate of the first additional field-effect transistor is connected to the collector of the second output bipolar transistor; the gate of the second additional field-effect transistor is connected to the collector of the first output bipolar transistor, wherein the drain of the first additional field-effect transistor is connected to the first input a buffer amplifier, the drain of the second additional field-effect transistor is connected to the second input of the buffer amplifier.

EFFECT: designing a radiation-proof balanced operational amplifier for a bipolar-field technological process with low zero-offset voltage.

6 cl, 13 dwg