OPERATIONAL AMPLIFIER BASED ON WIDE-BAND SEMICONDUCTORS Russian patent published in 2024 - IPC H03F3/45 

FIELD: radio engineering.

SUBSTANCE: input differential stage of the operational amplifier is made on two input bipolar gallium arsenide transistors, wherein the collector of the first such transistor is connected to the first current output of the input differential stage, and the collector of the second one is with the second current output of the input differential stage, the emitters of these transistors are combined and connected to the current input, source of the sixth field-effect transistor of the intermediate stage is connected to the base of the first additional bipolar gallium arsenide transistor, source of the fifth field-effect transistor of the intermediate stage is connected to the base of the second additional bipolar gallium arsenide transistor, collectors of additional bipolar gallium arsenide transistors are matched with the second power supply bus, and their emitters are connected to the first power supply bus through an additional source of reference current.

EFFECT: design of a precision operational amplifier circuit with a low level of a systematic component of zero offset voltage and high voltage gain within the framework of a combined GaAs process, which allows using only p-n-p bipolar and nJFet field-effect transistors.

2 cl, 5 dwg