METHOD OF PRODUCING PRECIPITATED SILICON DIOXIDE, INCLUDING HIGH-TEMPERATURE DISINTEGRATION STEP Russian patent published in 2016 - IPC C01B33/193 

Abstract RU 2578315 C1

FIELD: chemistry.

SUBSTANCE: invention relates to a method of producing precipitated silicon dioxide, which includes reacting a silicate with an acidifying agent to obtain a suspension of precipitated silicon dioxide (S1), a separation step to obtain a cake, a step of disintegrating the said cake to obtain a suspension of precipitated silicon dioxide (S2) and drying the said suspension. According to the method, the disintegration step is carried out in a hot state at a temperature of 50 to 120°C.

EFFECT: high output and cost effectiveness of the method while preserving the quality of the product.

12 cl, 2 tbl

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RU 2 578 315 C1

Authors

Furne Eliz

Neve Silven

Rasinu Zhoel

Dates

2016-03-27Published

2013-03-21Filed