SCANNING VOLTAGE GENERATOR Russian patent published in 2016 - IPC H03K4/12 

FIELD: physics.

SUBSTANCE: invention relates to pulse engineering and can be used in radio electronic devices of measurement equipment and automation. Generator of sweep voltage, comprising power supply source and dual-channel start-up unit, generating cascade of two mirror-like installed shoulders, new is the fact that as a power source a low-voltage source is used connected to the two-channel start unit and generating cascade, and a high voltage source, connected to the generating cascade; shoulders of generating cascade are interconnected via terminals of the first capacitor, and each shoulder is composed of bipolar and MOS transistors, four resistors and three capacitors, with the emitter of bipolar transistor of the first shoulder connected to first terminals of the first capacitor and the first resistor; base connected to the negative terminal of a two-channel start unit, the collector is connected to first terminal of the seventh resistor and the emitter of bipolar transistor of the second shoulder is connected to the second terminal of first capacitor and the first terminal of the second resistor, base is connected to the positive terminal of double-channel start unit, collector - to a first terminal of eighth resistor, to the source of the MOS transistor of the first arm - second terminal of the seventh resistor, to the gate - first terminals of the fourth capacitor and a fifth resistor to the drain - first terminals of the second and the sixth capacitor and the third resistor, to the source of the MOS transistor of the second arm - second terminal an eighth resistor, to the gate - first terminals of the fifth capacitor and the sixth resistor to the drain - first terminals of the third and the seventh capacitor and the fourth resistor, wherein a common bus is connected to the second terminals of second, third, fourth and fifth capacitors, to the positive high voltage source - a second terminal of the third resistor, to the negative - the second terminal of the fourth resistor to the positive terminal of the low-voltage voltage source - the second terminals of the second and fifth resistors - to the negative second terminals of the first and sixth resistors, and the second terminals of the sixth and seventh capacitors - to corresponding outputs of the generator while in the first shoulder of MOS transistor is an n-channel and bipolar - npn type, in the second shoulder, respectively, the MOS transistor - p-channel and bipolar - pn-p type, thus design uses MOS transistors with reaction delay and time of increase not exceeding 30 ns and a low gate-drain capacitance up to 300 pF.

EFFECT: reduced labour intensiveness of production while maintaining operational characteristics.

7 cl, 2 dwg