CMOS SOI INTEGRAL CIRCUIT WITH HIGH RADIATION RESISTANCE (VERSIONS) Russian patent published in 2016 - IPC H01L27/105 

FIELD: space; physics.

SUBSTANCE: invention relates to submicron CMOS SOI IC operating in the conditions of high radiation doses typical for continuous operation of spacecraft in far space. CMOS SOI IC with high radiation resistance comprises a system-on-chip performing the function of information conversion and/or storage and a negative voltage generator, which includes series-connected a control device and a charge pump unit, the output of which is the output of the negative voltage generator and is connected to the output of the CMOS SOI IC substrate, the control device implements at least the function of forming clock pulses and has at least one output of clock pulses, the outputs of clock pulses of the control device are connected to corresponding inputs of clock pulses of the charge pump unit. Charge pump unit as per the first version includes at least two MOS-transistors and one capacitor, herewith all the MOS-transistors in the charge pump unit are P-channel ones. According to the second version, the charge pump unit includes at least one capacitor and at least two lateral bipolar diode implemented in a single CMOS SOI process along with the CMOS transistors.

EFFECT: invention provides extending the functionality of submicron CMOS SOI IC into the area of effect of high radiation doses due to elimination of radiation-induced leakage currents in transistors of the charge pump unit, thus eliminating faults of the charge pump unit and the CMOS SOI IC as a whole.

6 cl, 6 dwg