FIELD: physics; radio.
SUBSTANCE: invention relates to controlling high-voltage transistors. The control device has an input contact (IN) for receiving a logic control signal, an output contact (OUT) for transmitting the output signal for controlling a high-voltage MOS transistor, a first control n-channel MOS transistor (Q6) with low internal resistance, which is connected between a mass and the said output contact and the gate of which is connected to the said input contact, a control second p-channel MOS transistor (Q5) which is connected between the power contact and the output contact and the gate of which is connected to the said output contact through a bipolar transistor (Q2), connected in a common base circuit and current flows to its emitter, controlled by a capacitance circuit (C2, Q1, R2).
EFFECT: reduced cost.
9 cl, 3 dwg
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