METHOD FOR CORRECTION OF INTRINSIC TEMPERATURE DEPENDENCE OF SILICON PHOTOELECTRIC CONVERTERS Russian patent published in 2016 - IPC G01J1/44 H01L31/04 G01D3/28 G12B7/00 G01N25/72 

FIELD: instrument engineering.

SUBSTANCE: invention relates to methods of correction of natural temperature dependence of silicon photoconverters and may be used during thermal vacuum tests (TVT) of spacecraft (SC) or component parts thereof using solar radiation simulator. In disclosed method for correction of temperature dependence of silicon photoconverters, nonlinear temperature dependence of a specific photoconverter is determined directly before thermal vacuum tests by measuring temperature and illumination of photoconverter at different levels of illumination, plotting and approximation of curves of obtained data, analysis of angular dependence coefficients with subsequent construction and solution transcendental equation. Following results are achieved: correction of temperature dependence of silicon photoconverter is performed by analytical method, excluding use in vacuum chamber of additional heat-stabilising devices. During TVT, method comprises correcting deviation of photoconverter readings from actual installed illumination within a range of ± 12 %.

EFFECT: technical result is simplification of method for correction of temperature dependence of silicon photoconverters.

1 cl, 3 dwg