FIELD: measuring equipment.
SUBSTANCE: invention relates to a pressure sensor of a semiconductor material comprising a housing (1) forming the chamber (2) under a secondary vacuum, at least one resonator (3) located in the chamber and suspended by flexible bars (4), at least to one resiliently deforming diaphragm (3) closing the chamber, which also includes means for driving the resonator (7, 12), causing the resonator to vibrate, and means for tracking the vibration frequency of the resonator. The tracking means comprise at least one first pendant piezoresistive tensometer (9), one end of which is fixed to one of the bars and one end of which is fixed to the diaphragm. The resonator and the first tensometer form the alloyed zones, which are essentially identical in nature and in concentration.
EFFECT: increasing the system sensitivity.
21 cl, 3 dwg
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