METHOD OF DETERMINING PARAMETERS OF CASCADE-EXCITED TRAPS OF CHARGE MEDIA IN SEMICONDUCTOR Russian patent published in 2018 - IPC H01L21/66 

FIELD: physics.

SUBSTANCE: use of the invention in determining the parameters of cascade excited traps of the charge media in a semiconductor allows to explore the cascade-excited trap type in the broader class of semiconductor materials, starting from crystalline to organic semiconductors and nanocrystals. In the method of invention: the semiconductor sample is provided that omits at least 20% of radiation in the wavelength range of 300 to 1500 nm; the sample is cooled to the temperature of not higher than 100 K; the cooled sample is heated to the temperature of not less than 300 K at a rate of not more than 5 K/s; a light beam with a spectrum is passed through the sample during cooling and subsequent heating that lies in the range of 300-500 nm to 500-1500 nm and have the intensity ratio in the spectral maxima and minima of not more than 20; the spectrum of radiation transmitted through the sample during cooling and subsequent heating is recorded; the spectrum of the sample absorption is found by comparing the known spectrum of the light beam passing through the sample and the registered radiation spectrum; at least the presence of the traps is determined on changes of the absorption spectrum.

EFFECT: extended functionality due to the determination of not only the characteristics of the traps, but also the energy density of their states.

7 cl, 3 dwg