METHOD OF MEASUREMENT OF ELECTROPHYSICAL PARAMETERS OF SEMICONDUCTOR MATERIALS Russian patent published in 1997 - IPC

FIELD: measurement technology. SUBSTANCE: proposed method of determination of electrophysical parameters of semiconductor and semiinsulating materials is based on local nondestructive measurements of relaxation processes of electron-hole and trap systems in sample under conditions of their periodic excitation by light and quasi-equilibrium heating of sample. Method allows to measure time of relaxation of traps, their energy and concentration as well as their distribution in plane of plane and in depth. Concentration of equilibrium carriers and their distribution in depth and in plane of plate are determined in doped samples. EFFECT: improved authenticity of proposed method. 2 cl, 8 dwg